Samsung 4GB DDR3 1333Mhz PC3-10600 240-Pin Cl9 Memory Module

Overview

The Samsung M393B5270CH0-CH9 is a 4GB DDR3 registered DIMM memory module designed for server and enterprise use, delivering a data transfer rate of 1333 Mbps with CL9 latency. It provides reliable and stable performance essential for mission-critical systems, supporting dual voltage operation at 1.5 V and 1.35 V to optimize power consumption based on your setup.

This module features ECC functionality to detect and correct memory errors, enhancing data integrity in demanding environments. Its 240-pin layout fits standard server memory slots, and the registered design stabilizes signal quality, reducing the risk of data corruption during heavy workloads.

Key features

• ECC registered memory that helps maintain data accuracy by correcting errors automatically
• Dual voltage support allowing flexible power management between 1.5 V and 1.35 V
• Registered DIMM design that improves signal integrity for stable operation in servers
• Supports 1R x 4 rank organization with compatibility for both x4 and x8 configurations
• 240-pin form factor compatible with a wide range of enterprise server motherboards

Key specs

• Capacity: 4 GB
• Memory type: DDR3 ECC registered DIMM
• Speed: 1333 Mbps (PC3-10600)
• Latency: CL9
• Voltage: 1.5 V / 1.35 V dual voltage support
• Pin count: 240 pins
• Rank organization: 1R x 4
• Configuration support: x4 and x8

Connectivity and compatibility

This memory module is designed to fit into standard 240-pin DIMM slots found in many server and workstation motherboards. Its ECC and registered features make it compatible with systems that require error correction and signal stabilization, which are common in enterprise-grade hardware. It supports configurations with up to two ranks per DIMM and two DIMMs per channel, providing flexibility for various server architectures.

Ideal uses and environments

The Samsung M393B5270CH0-CH9 is well suited for IT professionals managing servers, data centers, or high-performance workstations where uptime and data integrity are critical. It performs reliably under continuous heavy workloads, making it a strong choice for environments that demand consistent memory stability and error-free operation.